US 11,869,870 B1
Bonding process with inhibited oxide formation
Paul M. Hagelin, Saratoga, CA (US); and Charles I. Grosjean, Los Gatos, CA (US)
Assigned to SiTime Corporation, Santa Clara, CA (US)
Filed by SiTime Corporation, Santa Clara, CA (US)
Filed on Sep. 27, 2022, as Appl. No. 17/953,697.
Application 17/953,697 is a division of application No. 17/138,255, filed on Dec. 30, 2020, granted, now 11,488,930.
Application 17/138,255 is a division of application No. 16/702,783, filed on Dec. 4, 2019, granted, now 10,910,341, issued on Feb. 2, 2021.
Application 16/702,783 is a division of application No. 16/222,939, filed on Dec. 17, 2018, granted, now 10,541,224, issued on Jan. 21, 2020.
Application 16/222,939 is a division of application No. 15/709,371, filed on Sep. 19, 2017, granted, now 10,192,850, issued on Jan. 29, 2019.
Claims priority of provisional application 62/396,817, filed on Sep. 19, 2016.
Int. Cl. H01L 23/00 (2006.01); H01L 25/00 (2006.01)
CPC H01L 24/83 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05609 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05618 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05673 (2013.01); H01L 2224/05676 (2013.01); H01L 2224/05678 (2013.01); H01L 2224/05683 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/80048 (2013.01); H01L 2224/80097 (2013.01); H01L 2224/80805 (2013.01); H01L 2224/83048 (2013.01); H01L 2224/83143 (2013.01); H01L 2224/83355 (2013.01); H01L 2224/83895 (2013.01); H01L 2224/83911 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/1461 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a first die having a first electrical contact; and
a second die having a second electrical contact;
wherein the apparatus is fabricated according to a process in which an oxide-inhibiting material, disposed on a surface of one of the first electrical contact and the second electrical contact, is melted and forms a bond region between the first electrical contact and the second electrical contact, the bond region having a material constituency that is at least in part different than either the first electrical contact or the second electrical contact;
wherein:
the first electrical contact comprises one of aluminum, a mixture of aluminum-silicon, a mixture of aluminum-copper and a mixture of aluminum-silicon-copper; and
the second electrical contact comprises one of silicon, germanium, and a mixture of silicon-germanium.