CPC H01L 24/83 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05609 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05618 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05673 (2013.01); H01L 2224/05676 (2013.01); H01L 2224/05678 (2013.01); H01L 2224/05683 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/80048 (2013.01); H01L 2224/80097 (2013.01); H01L 2224/80805 (2013.01); H01L 2224/83048 (2013.01); H01L 2224/83143 (2013.01); H01L 2224/83355 (2013.01); H01L 2224/83895 (2013.01); H01L 2224/83911 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/1461 (2013.01)] | 22 Claims |
1. An apparatus comprising:
a first die having a first electrical contact; and
a second die having a second electrical contact;
wherein the apparatus is fabricated according to a process in which an oxide-inhibiting material, disposed on a surface of one of the first electrical contact and the second electrical contact, is melted and forms a bond region between the first electrical contact and the second electrical contact, the bond region having a material constituency that is at least in part different than either the first electrical contact or the second electrical contact;
wherein:
the first electrical contact comprises one of aluminum, a mixture of aluminum-silicon, a mixture of aluminum-copper and a mixture of aluminum-silicon-copper; and
the second electrical contact comprises one of silicon, germanium, and a mixture of silicon-germanium.
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