US 11,869,869 B2
Heterogeneous dielectric bonding scheme
Chen-Hua Yu, Hsinchu (TW); Wen-Chih Chiou, Zhunan Township (TW); Ku-Feng Yang, Baoshan Township (TW); and Ming-Tsu Chung, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 6, 2021, as Appl. No. 17/457,704.
Claims priority of provisional application 63/178,081, filed on Apr. 22, 2021.
Prior Publication US 2022/0344301 A1, Oct. 27, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/80 (2013.01) [H01L 24/08 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
putting a first package component into contact with a second package component, wherein:
the first package component comprises a first dielectric layer comprising a first dielectric material, wherein the first dielectric material is a silicon-oxide-based dielectric material;
the second package component comprises a second dielectric layer comprising a second dielectric material different from the first dielectric material, wherein the second dielectric material comprises silicon and an element selected from the group consisting of carbon, nitrogen, and combinations thereof, and wherein before the first package component is put to contact with the second package component, no treatment process using nitrogen (N2) is preformed, and no treatment process using oxygen (O2) is performed; and
performing an annealing process to bond the first dielectric layer to the second dielectric layer.