US 11,869,852 B2
Physical unclonable functions with copper-silicon oxide programmable metallization cells
Michael Kozicki, Phoenix, AZ (US); and Wenhao Chen, Folsom, CA (US)
Assigned to ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US)
Filed by Michael Kozicki, Phoenix, AZ (US); and Wenhao Chen, Folsom, CA (US)
Filed on Sep. 21, 2021, as Appl. No. 17/480,928.
Application 17/480,928 is a continuation of application No. 16/496,767, granted, now 11,127,694, previously published as PCT/US2018/024156, filed on Mar. 23, 2018.
Claims priority of provisional application 62/475,725, filed on Mar. 23, 2017.
Prior Publication US 2022/0148982 A1, May 12, 2022
Int. Cl. H01L 23/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H01L 23/573 (2013.01) [H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/026 (2023.02); H10N 70/041 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02); H10N 70/8416 (2023.02); H10N 70/883 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A method of producing a PUF device, the method comprising:
providing an electrode;
subsequently depositing a layer of silicon oxide onto the electrode; and
subsequently depositing a copper film onto the layer of silicon oxide to form a copper electrode,
wherein the layer of silicon oxide is deposited by physical vapor deposition, wherein the physical vapor deposition optionally includes a sputtering step and/or an evaporation step, and
wherein the physical vapor deposition conditions produce a relatively low density layer of silicon oxide.