CPC H01L 23/573 (2013.01) [H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/026 (2023.02); H10N 70/041 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02); H10N 70/8416 (2023.02); H10N 70/883 (2023.02)] | 16 Claims |
1. A method of producing a PUF device, the method comprising:
providing an electrode;
subsequently depositing a layer of silicon oxide onto the electrode; and
subsequently depositing a copper film onto the layer of silicon oxide to form a copper electrode,
wherein the layer of silicon oxide is deposited by physical vapor deposition, wherein the physical vapor deposition optionally includes a sputtering step and/or an evaporation step, and
wherein the physical vapor deposition conditions produce a relatively low density layer of silicon oxide.
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