US 11,869,807 B2
Fully self-aligned subtractive etch
Lili Feng, San Jose, CA (US); Yuqiong Dai, Santa Clara, CA (US); Madhur Sachan, Belmont, CA (US); Regina Freed, Los Altos, CA (US); and Ho-yung David Hwang, Cupertino, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 1, 2021, as Appl. No. 17/335,399.
Claims priority of provisional application 63/037,210, filed on Jun. 10, 2020.
Prior Publication US 2021/0391215 A1, Dec. 16, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 21/76885 (2013.01) [H01L 21/76832 (2013.01); H01L 21/76837 (2013.01); H01L 23/5226 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of forming an electronic device, the method comprising:
forming a first metallization line, the first metallization line having a first width;
forming an oversized via mask on a via metallization layer on the first metallization line, the oversized via mask having a mask width and a mask length, the via mask comprising an extreme ultraviolet (EUV) trilayer on a hard mask layer and the mask width greater than the first width of the first metallization line;
forming a via, the via having a via metal length that is equal to the mask width and having a via metal width that is equal to the first width; and
forming a second metallization line.