US 11,869,806 B2
Methods of forming molybdenum contacts
Seshadri Ganguli, Sunnyvale, CA (US); Jacqueline S. Wrench, San Jose, CA (US); Yixiong Yang, Fremont, CA (US); Yong Yang, Tengzhou (CN); and Srinivas Gandikota, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 7, 2021, as Appl. No. 17/314,515.
Prior Publication US 2022/0359281 A1, Nov. 10, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/76877 (2013.01) [H01L 21/02068 (2013.01); H01L 21/76831 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, the method comprising:
cleaning a substrate to form a substrate surface substantially free of oxide, the substrate including at least one feature having a bottom surface and a sidewall surface, the bottom surface comprising silicon germanium (SiGe), and the sidewall surface comprising a dielectric material;
exposing the substrate surface to a first molybdenum precursor;
exposing the substrate surface to a reactant to selectively deposit a first molybdenum film on the bottom surface; and
forming a cap layer on the first molybdenum film or treating the first molybdenum film to form the cap layer, the cap layer comprising a metal nitride, a PVD metal, or combinations thereof,
the method performed in a processing chamber without breaking vacuum.