US 11,869,800 B2
Method for fabricating a semiconductor device
Harry-Hak-Lay Chuang, Singapore (SG); Bao-Ru Young, Zhubei (TW); Wei Cheng Wu, Zhubei (TW); Meng-Fang Hsu, Hsinchu (TW); Kong-Pin Chang, Caotun Township (TW); and Chia Ming Liang, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 22, 2020, as Appl. No. 16/908,027.
Application 15/978,579 is a division of application No. 13/793,220, filed on Mar. 11, 2013, granted, now 9,972,524, issued on May 15, 2018.
Application 16/908,027 is a continuation of application No. 15/978,579, filed on May 14, 2018, granted, now 10,692,750.
Prior Publication US 2020/0321238 A1, Oct. 8, 2020
Int. Cl. H01L 21/76 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/76 (2013.01) [H01L 21/2658 (2013.01); H01L 21/26533 (2013.01); H01L 21/76224 (2013.01); H01L 29/0642 (2013.01); H01L 29/1054 (2013.01); H01L 29/66651 (2013.01); H01L 29/7834 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a substrate having a shallow trench isolation feature (STI) disposed around a well in the substrate, wherein the well includes a first dopant and the STI has a top surface opposite the substrate that extends along a first plane, wherein the well includes an edge that faces the STI;
a source/drain feature disposed over the well and in direct contact with the edge of the well that faces the STI;
a channel disposed over the well adjacent the source/drain feature such that the channel does not extend above the first plane, wherein the channel includes a second dopant;
a gate electrode disposed over the channel; and
a barrier layer disposed between the channel and the well, wherein the barrier layer has a bottom surface facing the substrate and an opposing top surface facing away from the substrate, and wherein the source/drain feature directly contacts the top surface of the barrier layer.