US 11,869,779 B2
Wafer cleaning equipment and cleaning method
Sukai Zhu, Hefei (CN); and YenTeng Huang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Appl. No. 17/441,215
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
PCT Filed Jun. 30, 2021, PCT No. PCT/CN2021/103806
§ 371(c)(1), (2) Date Sep. 20, 2021,
PCT Pub. No. WO2022/077960, PCT Pub. Date Apr. 21, 2022.
Claims priority of application No. 202011087901.0 (CN), filed on Oct. 13, 2020.
Prior Publication US 2023/0098666 A1, Mar. 30, 2023
Int. Cl. H01L 21/67 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/67051 (2013.01) [H01L 21/02057 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A wafer cleaning equipment, the wafer cleaning equipment comprising:
a wafer carrying structure, configured to carry a wafer, a center of the wafer is consistent with a center of the wafer carrying structure;
a cleaning device, comprising a nozzle, the nozzle is disposed above the wafer carrying structure and is configured to spray a cleaning agent onto a surface of the wafer carried by the wafer carrying structure;
a nozzle adjusting device, comprising a nozzle adjusting mechanism, the nozzle adjusting mechanism is connected to the nozzle and is configured to adjust at least one of a position or a spray angle of the nozzle, the nozzle adjusting mechanism comprises a nozzle position adjusting unit for adjusting the position of the nozzle in at least one dimension of a three-dimensional space, and the nozzle position adjusting unit comprises:
a horizontal adjusting assembly for adjusting the position of the nozzle on a horizontal plane; and
a height adjusting assembly for adjusting the position of the nozzle in a height direction;
a flow rate adjusting device, comprising a flow rate adjusting unit, configured to adjust a flow rate of the cleaning agent sprayed by the nozzle;
a measuring wafer, a size of the measuring wafer being the same as a size of the wafer, and a center of the measuring wafer is consistent with the center of the wafer carrying structure;
a landing detecting unit, configured to detect a landing position of the cleaning agent sprayed by the nozzle onto a surface of the measuring wafer; and
a control unit, connected to the landing detecting unit, the nozzle adjusting mechanism and the flow rate adjusting unit, configured to detect the landing position of the cleaning agent sprayed by the nozzle onto the surface of the measuring wafer by means of the landing detecting unit and control at least one of the nozzle adjusting mechanism or the flow rate adjusting unit when it is determined that the landing position of the cleaning agent sprayed by the nozzle onto the surface of the measuring wafer deviates from a preset target region, so that the landing position of the cleaning agent sprayed by the nozzle onto the surface of the measuring wafer is within the preset target region, wherein the preset target region is a circular region.