US 11,869,776 B2
RF devices with enhanced performance and methods of forming the same
Julio C. Costa, Oak Ridge, NC (US); Michael Carroll, Jamestown, NC (US); Philip W. Mason, Greensboro, NC (US); and Merrill Albert Hatcher, Jr., Greensboro, NC (US)
Assigned to Qorvo US, Inc., Greensboro, NC (US)
Filed by Qorvo US, Inc., Greensboro, NC (US)
Filed on Nov. 8, 2019, as Appl. No. 16/678,586.
Claims priority of provisional application 62/866,882, filed on Jun. 26, 2019.
Claims priority of provisional application 62/795,804, filed on Jan. 23, 2019.
Prior Publication US 2020/0234978 A1, Jul. 23, 2020
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/568 (2013.01) [H01L 23/3128 (2013.01); H01L 24/19 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/32225 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a mold device die comprising a device region, a thermally conductive film, and a first mold compound, wherein:
the device region includes a front-end-of-line (FEOL) portion and a back-end-of-line (BEOL) portion underneath the FEOL portion, wherein:
the FEOL portion comprises an active layer and isolation sections, which surround the active layer and extend vertically beyond a top surface of the active layer to define an opening within the isolation sections and over the active layer, wherein the isolation sections are formed of silicon dioxide; and
each of the isolation sections does not cover the top surface of the active layer;
the thermally conductive film resides at least over the top surface of the active layer of the FEOL portion within the opening, wherein the thermally conductive film has a thermal conductivity greater than 10 W/m·K and an electrical resistivity greater than 1E5 Ohm-cm; and
the first mold compound resides over the thermally conductive film, wherein:
silicon crystal, which has no germanium, nitrogen, or oxygen content, does not exist between the first mold compound and the active layer; and
a multilayer redistribution structure formed underneath the BEOL portion of the mold device die, wherein the multilayer redistribution structure comprises a plurality of bump structures, which are on a bottom surface of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.