US 11,869,772 B2
Method for silicidation of semiconductor device, and corresponding semiconductor device
Denis Monnier, Saint Ismier (FR); and Olivier Gonnard, Saint-Egreve (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed on Jun. 3, 2021, as Appl. No. 17/338,379.
Application 17/338,379 is a division of application No. 16/515,805, filed on Jul. 18, 2019, granted, now 11,056,342.
Claims priority of application No. 1857187 (FR), filed on Aug. 1, 2018.
Prior Publication US 2021/0296129 A1, Sep. 23, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 21/285 (2006.01)
CPC H01L 21/28052 (2013.01) [H01L 21/2855 (2013.01); H01L 21/28079 (2013.01); H01L 21/823443 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor body;
a first gate structure overlying a surface of the semiconductor body, the first gate structure being silicided;
a second gate structure overlying the surface of the semiconductor body, the second gate structure not being silicided;
an oxide layer overlying the second gate structure and extending toward the first gate structure; and
a silicon nitride region laterally spaced from the second gate structure and overlying a portion of the oxide layer between the first gate structure and the second gate structure, wherein the silicon nitride region occupies a surface area of less than 50% of a total surface area of the semiconductor body.