US 11,869,770 B2
Selective deposition of etch-stop layer for enhanced patterning
Nagraj Shankar, Tualatin, OR (US); Kapu Sirish Reddy, Portland, OR (US); Jon Henri, West Linn, OR (US); Pengyi Zhang, Tigard, OR (US); Elham Mohimi, Hillsboro, OR (US); Bhavin Jariwala, Lake Oswego, OR (US); and Arpan Pravin Mahorowala, West Linn, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Jul. 29, 2021, as Appl. No. 17/389,301.
Application 17/389,301 is a continuation of application No. 16/744,022, filed on Jan. 15, 2020, granted, now 11,094,542.
Application 16/744,022 is a continuation of application No. 15/972,918, filed on May 7, 2018, granted, now 10,566,194.
Prior Publication US 2021/0358753 A1, Nov. 18, 2021
Int. Cl. H01L 21/033 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); C23C 16/40 (2006.01); H01L 21/027 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/67 (2006.01); C23F 1/08 (2006.01)
CPC H01L 21/0337 (2013.01) [C23C 16/401 (2013.01); C23C 16/403 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); H01L 21/0228 (2013.01); H01L 21/0273 (2013.01); H01L 21/02115 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/30604 (2013.01); H01L 21/31058 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); C23F 1/08 (2013.01); H01L 21/67069 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1;
conformally capping the substrate with an oxide material (M3) after adding M2;
depositing a layer of a conformal material (M6) after conformally capping the substrate;
gap filling the substrate with filling material M4 after depositing M6;
removing top surfaces of M6 from the substrate after the gap filling;
selectively growing stop-etch material (M5) on exposed surfaces of M3;
removing M4 from the substrate after selectively growing M5; and
etching the substrate after removing M4 to transfer the pattern into M1.