US 11,869,769 B2
Method and system of control of epitaxial growth
Winnie Victoria Wei-Ning Chen, Hsinchu County (TW); and Andrew Joseph Kelly, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 21, 2022, as Appl. No. 17/651,878.
Application 17/651,878 is a continuation of application No. 16/384,572, filed on Apr. 15, 2019, granted, now 11,257,671.
Claims priority of provisional application 62/738,727, filed on Sep. 28, 2018.
Prior Publication US 2022/0199399 A1, Jun. 23, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/268 (2006.01)
CPC H01L 21/0262 (2013.01) [H01L 21/268 (2013.01); H01L 21/67115 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of semiconductor fabrication, comprising:
providing a semiconductor fabrication apparatus, the semiconductor fabrication apparatus including:
a susceptor configured to hold a substrate in a chamber;
a UV radiation producing source disposed over the susceptor, wherein the UV radiation producing source includes a plurality of UV radiation lamps operable to provide a tunable amount of UV radiation; and
a heat source providing heat energy to the chamber;
positioning the substrate on the susceptor, wherein the substrate has a first region and a second region; and
tuning the plurality of UV radiation lamps to provide a first amount of UV radiation to the first region of the substrate while concurrently providing a second amount of UV radiation to the second region of the substrate during an epitaxial growth process on the first region and the second region, wherein the first amount of UV radiation is different than the second amount of UV radiation wherein the first region is on a first plane and the second region is on a second plane, the second plane substantially perpendicular to the first plane.