CPC H01J 37/321 (2013.01) [H01J 37/32697 (2013.01); C23C 14/0068 (2013.01); C23C 14/0641 (2013.01); C23C 16/4401 (2013.01); H01J 37/3244 (2013.01); H01J 37/32504 (2013.01); H01J 2237/0262 (2013.01)] | 13 Claims |
1. A substrate processing apparatus comprising:
a process vessel in which a process chamber is provided, wherein a process gas is excited into plasma in the process chamber;
a gas supplier configured to supply the process gas into the process chamber;
a coil wound around an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface, and wherein a high frequency power is supplied to the coil; and
an electrostatic shield disposed between the outer peripheral surface of the process vessel and the coil,
wherein the electrostatic shield comprises:
a partition extending in a circumferential direction of the coil and configured to partition between a part of the coil and the outer peripheral surface of the process vessel; and
an opening extending in the circumferential direction of the coil and opened between another part of the coil and the outer peripheral surface of the process vessel.
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