US 11,869,561 B2
Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)
Julien Frougier, Albany, NY (US); Dimitri Houssameddine, Sunnyvale, CA (US); Ruilong Xie, Niskayuna, NY (US); Kangguo Cheng, Schenectady, NY (US); and Michael Rizzolo, Delmar, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 23, 2021, as Appl. No. 17/483,755.
Prior Publication US 2023/0086181 A1, Mar. 23, 2023
Int. Cl. G11C 11/16 (2006.01); G11C 11/18 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H01F 10/3272 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A cross-point spin orbit-torque magnetic random-access memory cell comprising:
a first spin-hall effect write line;
a second spin-hall effect write line non-colinear to the first spin-hall effect write line;
a cross-point free layer comprising a first free layer, a second free layer, and a dielectric layer disposed between the first and the second free layers, the cross-point free layer configured to store a magnetic bit and located between and in contact with both the first spin-hall effect write line and the second spin-hall effect write line; and
a remote sensing magnetic tunnel junction located in a vicinity of the cross-point free layer,
wherein a free layer sensor of the remote sensing magnetic tunnel junction is in contact with one of the first spin-hall effect write line and the second spin-hall effect write line.