CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H01F 10/3272 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02)] | 20 Claims |
1. A cross-point spin orbit-torque magnetic random-access memory cell comprising:
a first spin-hall effect write line;
a second spin-hall effect write line non-colinear to the first spin-hall effect write line;
a cross-point free layer comprising a first free layer, a second free layer, and a dielectric layer disposed between the first and the second free layers, the cross-point free layer configured to store a magnetic bit and located between and in contact with both the first spin-hall effect write line and the second spin-hall effect write line; and
a remote sensing magnetic tunnel junction located in a vicinity of the cross-point free layer,
wherein a free layer sensor of the remote sensing magnetic tunnel junction is in contact with one of the first spin-hall effect write line and the second spin-hall effect write line.
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