US 11,868,699 B2
Inverted integrated circuit and method of forming the same
Pochun Wang, Hsinchu (TW); Yu-Jung Chang, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); and Ting-Wei Chiang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Dec. 13, 2022, as Appl. No. 18/065,299.
Application 18/065,299 is a continuation of application No. 17/326,811, filed on May 21, 2021, granted, now 11,550,986.
Application 17/326,811 is a continuation of application No. 16/659,270, filed on Oct. 21, 2019, granted, now 11,048,849, issued on Jun. 29, 2021.
Claims priority of provisional application 62/753,279, filed on Oct. 31, 2018.
Prior Publication US 2023/0111501 A1, Apr. 13, 2023
Int. Cl. G06F 30/392 (2020.01); H01L 27/092 (2006.01); H03K 19/0948 (2006.01); H03K 19/20 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); G06F 30/39 (2020.01)
CPC G06F 30/392 (2020.01) [G06F 30/39 (2020.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H01L 27/092 (2013.01); H03K 19/0948 (2013.01); H03K 19/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first active region extending in a first direction, being in a substrate, and being located on a first level, the first active region including a first drain/source region and a second drain/source region;
a second active region extending in the first direction, being in the substrate, being located on the first level and being separated from the first active region in a second direction different from the first direction, the second active region including a third drain/source region;
a first insulating region over the first drain/source region;
a first contact extending in the second direction, overlapping the third drain/source region, being electrically coupled to the third drain/source region and being located on a second level different from the first level; and
a second contact extending in at least the second direction, overlapping the first insulating region and the first contact, the second contact being electrically insulated from the first drain/source region, and being electrically coupled to the third drain/source region, and being located on a third level different from the first level and the second level.