CPC G06F 11/1076 (2013.01) [G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); H03M 13/152 (2013.01); G11C 2213/15 (2013.01)] | 20 Claims |
7. A method of operating memory, comprising:
performing a first sense operation using a first voltage on a group of self-selecting memory cells comprising a word to sense data from the group of self-selecting memory cells; and
performing a second sense operation using a second voltage having an opposite polarity from the first voltage on the group of self-selecting memory cells after the first sense operation to identify memory cells of the group that cannot store data;
marking bits in the word corresponding to the identified memory cells of the group as erasures.
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