US 11,868,053 B2
Method for accurately obtaining photolithography parameter
Xun Yan, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Aug. 2, 2021, as Appl. No. 17/391,215.
Application 17/391,215 is a continuation of application No. PCT/CN2021/097740, filed on Jun. 1, 2021.
Claims priority of application No. 202010777000.8 (CN), filed on Aug. 5, 2020.
Prior Publication US 2022/0043360 A1, Feb. 10, 2022
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70625 (2013.01) [G03F 7/70641 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for accurately obtaining a photolithography parameter, comprising:
performing photolithography on a target carrier with different preset photolithography parameters by using a same mask pattern as a mask, to obtain a plurality of target patterns;
comparing each of the target patterns with a standard pattern to obtain an evaluation value, and setting the target pattern as a valid pattern, when the evaluation value corresponding to the target pattern is greater than or equal to a preset value;
drawing a Bosung curve by taking a line width of the valid pattern and a preset photolithography parameter corresponding to the line width as data; and
obtaining the photolithography parameter corresponding to a preset line width according to the Bosung curve.