CPC G03F 7/70625 (2013.01) [G03F 7/70641 (2013.01)] | 11 Claims |
1. A method for accurately obtaining a photolithography parameter, comprising:
performing photolithography on a target carrier with different preset photolithography parameters by using a same mask pattern as a mask, to obtain a plurality of target patterns;
comparing each of the target patterns with a standard pattern to obtain an evaluation value, and setting the target pattern as a valid pattern, when the evaluation value corresponding to the target pattern is greater than or equal to a preset value;
drawing a Bosung curve by taking a line width of the valid pattern and a preset photolithography parameter corresponding to the line width as data; and
obtaining the photolithography parameter corresponding to a preset line width according to the Bosung curve.
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