US 11,868,047 B2
Polymer layer in semiconductor device and method of manufacture
Sih-Hao Liao, New Taipei (TW); Yu-Hsiang Hu, Hsinchu (TW); Hung-Jui Kuo, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 21, 2020, as Appl. No. 17/026,667.
Prior Publication US 2022/0091505 A1, Mar. 24, 2022
Int. Cl. G03F 7/031 (2006.01); C08G 73/10 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01); H01L 21/56 (2006.01)
CPC G03F 7/031 (2013.01) [C08G 73/1067 (2013.01); C08G 73/1071 (2013.01); G03F 7/039 (2013.01); G03F 7/0387 (2013.01); H01L 21/481 (2013.01); H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49894 (2013.01); H01L 23/5389 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 25/18 (2013.01); H01L 21/561 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/82101 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
placing a polymer material over a substrate, the polymer material comprising:
a polymer precursor, the polymer precursor comprising the following structure

OG Complex Work Unit Chemistry
wherein n outside the brackets represents a number of the repeating unit of the structure, and wherein R represents

OG Complex Work Unit Chemistry
a photosensitizer; and
a solvent;
patterning the polymer material; and
curing the polymer material at a temperature in a range of 200° C. to 300° C.