US 11,868,042 B2
Master stamp for nano imprint and method for manufacturing the same
Seung-won Park, Seoul (KR); Yunjong Yeo, Asan-si (KR); Sanghoon Lee, Cheonan-si (KR); Daehwan Jang, Seoul (KR); Incheol Jeong, Suwon-si (KR); and Hyungbin Cho, Seongnam-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-Si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Jul. 8, 2019, as Appl. No. 16/504,806.
Claims priority of application No. 10-2018-0103601 (KR), filed on Aug. 31, 2018.
Prior Publication US 2020/0073235 A1, Mar. 5, 2020
Int. Cl. G03F 7/00 (2006.01); B82Y 40/00 (2011.01); B29C 59/02 (2006.01); G02B 5/30 (2006.01); G02F 1/1335 (2006.01); B82Y 10/00 (2011.01)
CPC G03F 7/0002 (2013.01) [G02B 5/3058 (2013.01); G02F 1/133528 (2013.01); B29C 59/022 (2013.01); B29C 2059/023 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A stamp for nano imprinting, the stamp comprising:
a base substrate having a plane defined by a first direction and a second direction crossing each other;
a first pattern group comprising a first pattern part and a second pattern part disposed on the base substrate, arranged to be spaced apart from each other in the first direction, and each has a rectangular shape defined along the first direction and the second direction; and
a second pattern group comprising a third pattern part and a fourth pattern part disposed on the base substrate, arranged to be spaced apart from each other in the first direction, and each has a rectangular shape defined along the first direction and the second direction,
wherein each of the first pattern part to the fourth pattern part comprises a plurality of nano patterns spaced apart along the first direction and each extending in the second direction,
wherein the first pattern part, the third pattern part, the second pattern part, and the fourth pattern part are disposed to be arranged adjacent to each other in a linear sequential order in the first direction,
wherein, in the second direction, a first length of the nano patterns of the first pattern part are different from a second length of the nano patterns of the second pattern part, and
wherein, in the second direction, a third length of the nano patterns of the third pattern part are different from a fourth length of the nano patterns of the fourth pattern part.