CPC G01R 33/0052 (2013.01) [G01R 33/035 (2013.01); G01R 33/07 (2013.01); H10N 60/81 (2023.02); H10N 60/85 (2023.02)] | 22 Claims |
1. A quantum Hall resistance apparatus to improve resistance standards, the quantum Hall resistance apparatus comprising:
a substrate;
a plurality of Hall bars made of graphene electrical conduction layer, which is epitaxially grown on the substrate, each Hall bar having a plurality of first contact patterns at edges thereof;
a plurality of contacts, each including a second contact pattern and configured to connect to a corresponding first contact pattern; and
a protective layer configured to protect first contact patterns and to increase adherence between the first contact patterns and the second contact patterns,
wherein the plurality of contacts become a superconductor at a temperature lower than or equal to a predetermined temperature and under up to a predetermined magnetic flux density.
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