CPC C30B 9/06 (2013.01) [C30B 11/00 (2013.01); C30B 15/007 (2013.01); C30B 27/02 (2013.01); C30B 29/46 (2013.01); C30B 29/48 (2013.01)] | 16 Claims |
1. A method of growing a cadmium zinc telluride (CdZnTe) crystal, the method comprising:
providing a crucible including a solid CdZnTe source;
forming a Te-rich Cd—Zn—Te melt on the solid CdZnTe source, wherein the Te-rich Cd—Zn—Te melt floats on the solid CdZnTe source;
positioning a CdZnTe seed crystal in physical contact with the Te-rich Cd—Zn—Te melt; and
growing the CdZnTe crystal from the Te-rich Cd—Zn—Te melt.
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