US 11,866,629 B2
Scalable and safe nanocrystal precursor
Moungi Bawendi, Cambridge, MA (US); Daniel Franke, Cambridge, MA (US); and Matthias Ginterseder, Cambridge, MA (US)
Assigned to Massachusetts Institute of Technology, Cambridge, MA (US)
Filed by MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US)
Filed on Jan. 12, 2021, as Appl. No. 17/147,057.
Claims priority of provisional application 62/960,671, filed on Jan. 13, 2020.
Prior Publication US 2021/0214611 A1, Jul. 15, 2021
Int. Cl. C09K 11/88 (2006.01); C09K 11/08 (2006.01); H01L 29/06 (2006.01); C01G 28/00 (2006.01); C01B 19/04 (2006.01); C01B 17/20 (2006.01); C01G 30/00 (2006.01); C01B 21/072 (2006.01); C01B 21/06 (2006.01); B82Y 40/00 (2011.01)
CPC C09K 11/883 (2013.01) [B82Y 40/00 (2013.01); C01B 17/20 (2013.01); C01B 19/04 (2013.01); C01B 21/0632 (2013.01); C01B 21/072 (2013.01); C01G 28/00 (2013.01); C01G 30/00 (2013.01); C09K 11/0883 (2013.01); H01L 29/0665 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of making a semiconductor nanocrystal comprising:
contacting an M donor including a Group III element in an oxidation state lower than the highest oxidation state of a Group II element or Group III element with an E donor including a Group V element or Group VI element in an oxidation state higher than the oxidation state of the Group V element or Group VI in a product semiconductor material; and
decomposing the M donor in the presence of the E donor,
thereby forming a population of nanocrystal cores including the product semiconductor material
wherein the M donor includes In(I) or a mixture of indium species generating In(I).