CPC C09K 11/883 (2013.01) [B82Y 40/00 (2013.01); C01B 17/20 (2013.01); C01B 19/04 (2013.01); C01B 21/0632 (2013.01); C01B 21/072 (2013.01); C01G 28/00 (2013.01); C01G 30/00 (2013.01); C09K 11/0883 (2013.01); H01L 29/0665 (2013.01)] | 9 Claims |
1. A method of making a semiconductor nanocrystal comprising:
contacting an M donor including a Group III element in an oxidation state lower than the highest oxidation state of a Group II element or Group III element with an E donor including a Group V element or Group VI element in an oxidation state higher than the oxidation state of the Group V element or Group VI in a product semiconductor material; and
decomposing the M donor in the presence of the E donor,
thereby forming a population of nanocrystal cores including the product semiconductor material
wherein the M donor includes In(I) or a mixture of indium species generating In(I).
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