CPC H10N 70/257 (2023.02) [G11C 13/004 (2013.01); G11C 29/50 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a resistive memory device; and
at least a first photodetector and a second photodetector positioned adjacent to the resistive memory device to allow for a spatial measurement of a filament in the resistive memory device.
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