US 11,864,472 B2
Methods and systems for atomic layer etching and atomic layer deposition
Harold Frank Greer, Pasadena, CA (US); Andrew D. Beyer, Pasadena, CA (US); Matthew D. Shaw, Pasadena, CA (US); and Daniel P. Cunnane, Pasadena, CA (US)
Assigned to CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (US)
Filed by California Institute of Technology, Pasadena, CA (US)
Filed on Jul. 12, 2021, as Appl. No. 17/373,619.
Claims priority of provisional application 63/050,617, filed on Jul. 10, 2020.
Prior Publication US 2022/0013706 A1, Jan. 13, 2022
Int. Cl. H10N 60/01 (2023.01); H10N 60/83 (2023.01)
CPC H10N 60/01 (2023.02) [H10N 60/83 (2023.02)] 20 Claims
OG exemplary drawing
 
20. An apparatus for etching a substrate, comprising:
one or more reactor tools reacting a reactant with a surface of a dielectric layer so as to form a reactive layer on the dielectric layer, wherein the reactant comprises a gas or plasma, wherein:
the reactive layer comprises a chemical compound including the reactant and elements of the dielectric layer and the reactive layer comprises sidewalls defined by protrusions; and
the dielectric layer comprises the protrusions formed by the underlying nanowires; and
one or more etching tools selectively etching the protrusions laterally through the sidewalls so as to planarize the surface and remove or shrink the protrusions.