CPC H10N 10/00 (2023.02) [C01B 19/002 (2013.01); H10N 10/852 (2023.02); C01P 2002/50 (2013.01); C01P 2002/72 (2013.01); C01P 2004/03 (2013.01); C01P 2006/32 (2013.01); C01P 2006/40 (2013.01)] | 10 Claims |
1. A preparation method of a stretchable inorganic thermoelectric thin film comprising the following steps:
synthesizing AgxSn1-xSe solution by a solution process where X is a decimal number greater than 0 and less than 1;
forming a thermoelectric thin film by coating the AgxSn1-xSe solution on a substrate;
forming a physically separated pattern on the thermoelectric thin film;
forming a patterned thermoelectric film by electrically connecting each pattern;
encapsulating the patterned thermoelectric thin film;
transferring the encapsulated patterned thermoelectric thin film to an elongated stretchable substrate; and
removing a tensile force from the elongated stretchable substrate.
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