US 11,864,430 B2
Organic light emitting diode display device
Seong Min Wang, Seongnam-si (KR); Young-In Hwang, Suwon-si (KR); Yong Ho Yang, Suwon-si (KR); Yong Su Lee, Seoul (KR); Jae Seob Lee, Seoul (KR); and Gyoo Chul Jo, Suwon-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Jun. 29, 2022, as Appl. No. 17/853,468.
Application 17/853,468 is a continuation of application No. 17/208,571, filed on Mar. 22, 2021, granted, now 11,380,746.
Application 17/208,571 is a continuation of application No. 16/251,639, filed on Jan. 18, 2019, granted, now 10,985,227, issued on Apr. 20, 2021.
Claims priority of application No. 10-2018-0037658 (KR), filed on Mar. 30, 2018.
Prior Publication US 2022/0336554 A1, Oct. 20, 2022
Int. Cl. H10K 59/123 (2023.01); G09G 3/3233 (2016.01); H10K 50/805 (2023.01); G09G 3/3258 (2016.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 59/121 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01)
CPC H10K 59/123 (2023.02) [G09G 3/3233 (2013.01); G09G 3/3258 (2013.01); H10K 50/805 (2023.02); H10K 59/126 (2023.02); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); H10K 77/111 (2023.02); H10K 2102/311 (2023.02)] 24 Claims
OG exemplary drawing
 
1. An organic light emitting diode (OLED) display, comprising:
a substrate;
a bottom electrode on the substrate;
a pixel; and
a scan line, a data line, and a driving voltage line connected to the pixel, wherein
the pixel includes:
an organic light emitting diode;
a switching transistor connected to the scan line; and
a driving transistor,
the bottom electrode, disposed between the switching transistor and the substrate, includes a first portion disposed in an area that overlaps the switching transistor on a plane, and
the bottom electrode is exposed by a contact hole which is disposed outside of the pixel,
wherein
the switching transistor is a third transistor including a third semiconductor layer, and
one end of the third semiconductor layer is connected to one end of a first semiconductor layer of the driving transistor and the other end of the third semiconductor layer is electrically connected to a gate electrode of the driving transistor.