US 11,864,423 B2
Thin film transistor substrate, display apparatus and method of manufacturing the same
Thanh Tien Nguyen, Hwaseong-si (KR); Meejae Kang, Suwon-si (KR); Yongsu Lee, Seoul (KR); and Sanggun Choi, Suwon-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Jan. 10, 2022, as Appl. No. 17/571,895.
Application 17/571,895 is a division of application No. 16/737,653, filed on Jan. 8, 2020, granted, now 11,257,887.
Claims priority of application No. 10-2019-0033800 (KR), filed on Mar. 25, 2019.
Prior Publication US 2022/0130932 A1, Apr. 28, 2022
Int. Cl. H01L 27/14 (2006.01); H10K 59/121 (2023.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC H10K 59/1213 (2023.02) [H01L 27/1262 (2013.01); H01L 29/78603 (2013.01); H01L 29/78642 (2013.01); H01L 27/1274 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method of manufacturing a thin film transistor substrate, comprising:
forming a bank having an inclined surface inclined at an angle with respect to a substrate;
forming a first electrode on the substrate, and a second electrode on the bank, the first electrode being non-overlapping with the second electrode in a plan view;
forming a preliminary active pattern including amorphous silicon on the inclined surface, the first electrode, and the second electrode;
irradiating the preliminary active pattern with an excimer laser to form an active pattern including polysilicon;
forming a gate insulting layer on the active pattern; and
forming a gate electrode on the gate insulating layer,
wherein both the first electrode and the second electrode are non-overlapping with the inclined surface in a plan view.