US 11,864,417 B2
Display device including a node connection line, a shielding portion and driving voltage line
Junwon Choi, Yongin-si (KR); Yunkyeong In, Yongin-si (KR); Wonmi Hwang, Yongin-si (KR); and Junyong An, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-do (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Feb. 25, 2022, as Appl. No. 17/680,563.
Application 17/680,563 is a continuation of application No. 16/902,677, filed on Jun. 16, 2020, granted, now 11,264,432.
Application 16/902,677 is a continuation of application No. 16/135,476, filed on Sep. 19, 2018, granted, now 10,727,281, issued on Jul. 28, 2020.
Application 16/135,476 is a continuation of application No. 15/597,763, filed on May 17, 2017, granted, now 10,103,208, issued on Oct. 16, 2018.
Claims priority of application No. 10-2016-0074732 (KR), filed on Jun. 15, 2016.
Prior Publication US 2022/0181404 A1, Jun. 9, 2022
Int. Cl. H01L 29/08 (2006.01); H10K 59/00 (2023.01); H01L 27/12 (2006.01); G09G 3/3258 (2016.01); G09G 3/3233 (2016.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01)
CPC H10K 59/00 (2023.02) [G09G 3/3233 (2013.01); G09G 3/3258 (2013.01); H01L 27/1255 (2013.01); G09G 2300/043 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0251 (2013.01); G09G 2310/0262 (2013.01); G09G 2320/043 (2013.01); H10K 59/126 (2023.02); H10K 59/131 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display device comprising:
a first scan line extending in a first direction;
a data line extending in a second direction crossing the first direction;
a first transistor comprising a first semiconductor layer and a first gate electrode, wherein the first semiconductor layer is electrically connected to the data line via a first contact hole;
a second transistor electrically connected to the first transistor, the second transistor comprising a second semiconductor layer and a second gate electrode;
a third transistor comprising a third semiconductor layer and a third gate electrode;
a node connection line, wherein a first portion of the node connection line is electrically connected to the third semiconductor layer via a second contact hole, and a second portion of the node connection line is electrically connected to the second gate electrode via a third contact hole;
a shielding portion, wherein an end portion of the shielding portion disposed between the first contact hole and the second contact hole in a plan view; and
a driving voltage line extending in the second direction, wherein a portion of the driving voltage line overlaps a portion of the third semiconductor layer.