US 11,864,403 B2
Light-emitting device comprising first to third light-emitting layers
Takahiro Ishisone, Kanagawa (JP); Satoshi Seo, Kanagawa (JP); Yusuke Nonaka, Kanagawa (JP); and Nobuharu Ohsawa, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Aug. 23, 2021, as Appl. No. 17/408,588.
Application 17/408,588 is a continuation of application No. 16/878,759, filed on May 20, 2020, granted, now 11,158,832.
Application 16/878,759 is a continuation of application No. 15/911,225, filed on Mar. 5, 2018, granted, now 10,686,153, issued on Jun. 16, 2020.
Application 15/911,225 is a continuation of application No. 14/709,008, filed on May 11, 2015, abandoned.
Claims priority of application No. 2014-099560 (JP), filed on May 13, 2014; and application No. 2014-241575 (JP), filed on Nov. 28, 2014.
Prior Publication US 2021/0391554 A1, Dec. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 50/13 (2023.01); H10K 50/11 (2023.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01); H10K 101/40 (2023.01); H10K 101/10 (2023.01); H10K 101/00 (2023.01)
CPC H10K 50/131 (2023.02) [H10K 50/11 (2023.02); H10K 50/13 (2023.02); H10K 85/342 (2023.02); H10K 85/633 (2023.02); H10K 2101/10 (2023.02); H10K 2101/27 (2023.02); H10K 2101/40 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
a first electrode comprising indium and tin;
a first light-emitting layer over the first electrode;
a second light-emitting layer over the first light-emitting layer;
a third light-emitting layer over the second light-emitting layer;
a first layer comprising lithium fluoride;
a second electrode over the third light-emitting layer and in contact with the first layer, the second electrode comprising aluminum;
an electron-transport material, a Group 1 metal or a compound of the Group 1 metal, a hole-transport material, and a first organic compound which are between the second light-emitting layer and the third light-emitting layer; and
a second layer between the first light-emitting layer and the second light-emitting layer, the second layer comprising at least one of the electron-transport material, the Group 1 metal or the compound of the Group 1 metal, the hole-transport material, and the first organic compound,
wherein the first organic compound comprises at least one of a halogen group and a cyano group,
wherein the first light-emitting layer comprises a first host material and a first fluorescent material,
wherein the second light-emitting layer comprises a second organic compound, a third organic compound which forms an exciplex together with the second organic compound, and an iridium compound,
wherein the third light-emitting layer comprises a second host material and a second fluorescent material,
wherein an emission spectrum peak of the exciplex overlaps with an adsorption band on a longest wavelength side in an absorption spectrum of the iridium compound,
wherein the first fluorescent material and the second fluorescent material are the same material,
wherein the second organic compound is one of a triazole derivative, a dibenzofuran derivative, a pyrimidine derivative, a triazine derivative, a pyridine derivative, a bipyridine derivative, and a phenanthroline derivative,
wherein the first host material is an anthracene derivative or a tetracene derivative,
wherein the light-emitting device is configured to emit white light,
wherein a level of the lowest triplet excited state of the first fluorescent material is higher than a level of the lowest triplet excited state of the first host material, and
wherein a level of the lowest singlet excited state of the first host material is higher than a level of the lowest singlet excited state of the first fluorescent material.