US 11,864,379 B2
Three-dimensional memory and control method thereof
Xuezhun Xie, Wuhan (CN); Yali Song, Wuhan (CN); Lei Jin, Wuhan (CN); Xiangnan Zhao, Wuhan (CN); Yuanyuan Min, Wuhan (CN); and Jianquan Jia, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jan. 4, 2022, as Appl. No. 17/568,639.
Application 17/568,639 is a continuation of application No. PCT/CN2021/122551, filed on Oct. 8, 2021.
Claims priority of application No. 202011345682.1 (CN), filed on Nov. 26, 2020.
Prior Publication US 2022/0165741 A1, May 26, 2022
Int. Cl. G11C 11/34 (2006.01); H10B 41/27 (2023.01); G11C 5/02 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); H10B 43/27 (2023.01)
CPC H10B 41/27 (2023.02) [G11C 5/025 (2013.01); G11C 16/0483 (2013.01); G11C 16/3436 (2013.01); H10B 43/27 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A control method of a three-dimensional memory, the three-dimensional memory comprising a first deck and a second deck that are stacked in a vertical direction of a substrate, the first deck and the second deck each comprising a plurality of memory strings, each memory string comprising a plurality of memory cells, the plurality of memory cells comprising a first portion and a second portion, wherein a diameter of a channel structure corresponding to the first portion of memory cells is smaller than that of the channel structure corresponding to the second portion of memory cells, the method comprising:
performing a read operation for selected memory cells which are in at least one of the first deck or the second deck; and
applying a pass voltage to non-selected memory cells other than the selected memory cells in the first deck and the second deck, the pass voltage comprising a first pass voltage and a second pass voltage, the first pass voltage being lower than the second pass voltage, wherein the first pass voltage is applied to first non-selected memory cells in the first portion, and the second pass voltage is applied to second non-selected memory cells in the second portion.