US 11,863,899 B2
CMOS image sensor, image sensor unit and signal transmission methods therefor
Yuhang Zhao, Shanghai (CN); Jianxin Wen, Shanghai (CN); Changming Pi, Shanghai (CN); Xi Zeng, Shanghai (CN); and Ling Shen, Shanghai (CN)
Assigned to Shanghai IC R&D Center Co., Ltd., Shanghai (CN); and Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd, Shanghai (CN)
Appl. No. 17/602,819
Filed by SHANGHAI IC R & D CENTER CO., LTD., Shanghai (CN)
PCT Filed Dec. 30, 2019, PCT No. PCT/CN2019/129809
§ 371(c)(1), (2) Date Oct. 11, 2021,
PCT Pub. No. WO2020/207062, PCT Pub. Date Oct. 15, 2020.
Claims priority of application No. 201910289679 (CN), filed on Apr. 11, 2019; and application No. 201910333253 (CN), filed on Apr. 24, 2019.
Prior Publication US 2022/0159209 A1, May 19, 2022
Int. Cl. H04N 25/78 (2023.01); H04N 25/771 (2023.01); H04N 25/79 (2023.01)
CPC H04N 25/78 (2023.01) [H04N 25/771 (2023.01); H04N 25/79 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A CMOS image sensor, comprising:
a plurality of image sensor units, each of the plurality of image sensor units comprising a pixel unit and a resistive random access memory unit (RRAM unit) connected to the pixel unit, the pixel unit configured to convert a received optical signal into an analog electrical signal and output the analog electrical signal, and the RRAM unit configured to convert the analog electrical signal into a resistance value; and
a resistance-to-digital converting (RDC) unit, connected to the plurality of the image sensor units and configured to convert the resistance value into a digital signal; wherein the RDC unit comprises a resistance-to-voltage converting (RDC) module configured to convert the resistance value into a voltage value and an analog-to-digital converting module configured to convert the voltage value into a digital signal.