US 11,863,896 B2
Image sensor and photodetector with transistor diode-connected via a resistance element
Takashi Moue, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/275,828
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Aug. 8, 2019, PCT No. PCT/JP2019/031311
§ 371(c)(1), (2) Date Mar. 12, 2021,
PCT Pub. No. WO2020/066327, PCT Pub. Date Apr. 2, 2020.
Claims priority of application No. 2018-180800 (JP), filed on Sep. 26, 2018.
Prior Publication US 2022/0046197 A1, Feb. 10, 2022
Int. Cl. H04N 25/75 (2023.01); H03K 5/22 (2006.01); H04N 25/709 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/75 (2023.01) [H03K 5/22 (2013.01); H04N 25/709 (2023.01); H01L 27/14612 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a pixel that includes a photoelectric conversion element;
a signal line connected to the pixel; and
a comparator connected to the signal line, wherein
the comparator includes:
a differential input unit that includes a first input unit connected to a first capacitance unit and a second input unit connected to a second capacitance unit,
a current mirror unit that includes a first resistance element connected to the differential input unit and a transistor diode-connected via the first resistance element,
a second resistance element connected to the differential input unit, and
a switch unit provided between the first input unit and a junction between the first resistance element and the transistor, and between the second input unit and a junction between the second resistance element and the current mirror unit.