CPC H04N 25/704 (2023.01) [H01L 27/1461 (2013.01); H01L 27/14623 (2013.01); H04N 25/75 (2023.01)] | 7 Claims |
1. An imaging unit, comprising:
two or more image-plane phase-difference detection pixels each including:
a semiconductor layer that includes a front surface and a back surface on an opposite side to the front surface,
a photoelectric converter that is in the semiconductor layer, and is configured to generate electric charge corresponding to a light reception amount by photoelectric conversion,
a charge holding section that is between the front surface and the photoelectric converter in the semiconductor layer, and is configured to hold the electric charge,
a first light-blocking film that is positioned between the photoelectric converter and the charge holding section, and has an opening through which the electric charge is allowed to pass, and
a second light-blocking film that is positioned on an opposite side to the first light-blocking film as viewed from the photoelectric converter, wherein
the second light-blocking film of each of the two or more image-plane phase-difference detection pixels are in respective first regions, or are in respective second regions, the first regions each including an overlapping region that is a region overlapping the opening in a pixel region occupied by the photoelectric converter, the second regions being a region other than the first regions in the pixel region.
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