US 11,863,125 B2
Terahertz oscillator and producing method thereof
Safumi Suzuki, Tokyo (JP); Van Ta Mai, Tokyo (JP); Yusei Suzuki, Tokyo (JP); and Masahiro Asada, Tokyo (JP)
Assigned to TOKYO INSTITUTE OF TECHNOLOGY, Tokyo (JP)
Appl. No. 17/794,503
Filed by TOKYO INSTITUTE OF TECHNOLOGY, Tokyo (JP)
PCT Filed Jan. 5, 2021, PCT No. PCT/JP2021/000069
§ 371(c)(1), (2) Date Jul. 21, 2022,
PCT Pub. No. WO2021/171787, PCT Pub. Date Sep. 2, 2021.
Claims priority of application No. 2020-030428 (JP), filed on Feb. 26, 2020.
Prior Publication US 2023/0057209 A1, Feb. 23, 2023
Int. Cl. H03B 7/08 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/88 (2006.01); H01L 27/06 (2006.01)
CPC H03B 7/08 (2013.01) [H01L 21/30604 (2013.01); H01L 27/0605 (2013.01); H01L 27/0676 (2013.01); H01L 29/66083 (2013.01); H01L 29/882 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A terahertz oscillator comprising:
a slot antenna having a slot formed between a first electrode plate and a second electrode plate which are applied a bias voltage;
stabilizing resistors to respectively connect to said first electrode plate and said second electrode plate are provided in the slot;
a resonant tunneling diode (RTD) provided on said second electrode plate through a mesa; and
a conductive material member to form an air bridge between said first electrode plate and said mesa is provided,
wherein an oscillation in a terahertz frequency band is obtained due to a resonance of said RTD and said stabilizing resistors, and
wherein a width of said conductive material member is narrower than a width of said RTD for said slot antenna.