US 11,862,939 B1
Ultraviolet laser diode device
James W. Raring, Santa Barbara, CA (US); Melvin McLaurin, Santa Barbara, CA (US); Paul Rudy, Goleta, CA (US); Po Shan Hsu, Arcadia, CA (US); and Alexander Sztein, Santa Barbara, CA (US)
Assigned to KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed by KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed on Jun. 17, 2022, as Appl. No. 17/843,104.
Application 17/843,104 is a continuation of application No. 16/903,188, filed on Jun. 16, 2020, granted, now 11,387,629.
Application 16/903,188 is a continuation of application No. 16/217,359, filed on Dec. 12, 2018, granted, now 10,720,757, issued on Jul. 21, 2020.
Application 16/217,359 is a continuation of application No. 15/612,897, filed on Jun. 2, 2017, granted, now 10,193,309, issued on Jan. 29, 2019.
Application 15/612,897 is a continuation of application No. 14/968,710, filed on Dec. 14, 2015, granted, now 9,711,949, issued on Jul. 18, 2017.
Application 14/968,710 is a continuation of application No. 14/534,636, filed on Nov. 6, 2014, granted, now 9,246,311, issued on Jan. 26, 2016.
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/323 (2006.01); H01S 5/22 (2006.01); H01S 5/042 (2006.01); H01S 5/0234 (2021.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01)
CPC H01S 5/34333 (2013.01) [H01S 5/021 (2013.01); H01S 5/0206 (2013.01); H01S 5/0213 (2013.01); H01S 5/0215 (2013.01); H01S 5/0216 (2013.01); H01S 5/0217 (2013.01); H01S 5/0218 (2013.01); H01S 5/0234 (2021.01); H01S 5/0425 (2013.01); H01S 5/22 (2013.01); H01S 5/222 (2013.01); H01S 5/2214 (2013.01); H01S 5/32308 (2013.01); H01S 5/04253 (2019.08); H01S 5/04254 (2019.08); H01S 5/2009 (2013.01); H01S 5/2031 (2013.01); H01S 5/30 (2013.01); H01S 2301/173 (2013.01); H01S 2302/00 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An ultraviolet laser diode device operable at a wavelength of less than 380 nm and greater than 200 nm, the ultraviolet laser diode device comprising:
a handle substrate member comprising a surface region;
an interface region overlying the surface region;
a first transparent conductive oxide material with a band gap energy of greater than 3.2 eV and less than 7.5 eV overlying the interface region;
a p-type aluminum, gallium, and nitrogen containing material;
an active region comprising aluminum, gallium, and nitrogen containing material overlying the p-type aluminum, gallium, and nitrogen containing material; and
an n-type aluminum, gallium, and nitrogen containing material;
wherein a process of forming the ultraviolet laser diode device comprises:
bonding the interface region to the surface region; and
subjecting a release material to an energy source to initiate release of the n-type aluminum, gallium, and nitrogen containing material from the release material.