US 11,862,935 B2
Tunable DBR semiconductor laser
Takahiko Shindo, Musashino (JP); and Naoki Fujiwara, Musashino (JP)
Assigned to NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo (JP)
Appl. No. 17/610,519
Filed by Nippon Telegraph and Telephone Corporation, Tokyo (JP)
PCT Filed May 30, 2019, PCT No. PCT/JP2019/021618
§ 371(c)(1), (2) Date Nov. 11, 2021,
PCT Pub. No. WO2020/240794, PCT Pub. Date Dec. 3, 2020.
Prior Publication US 2022/0216674 A1, Jul. 7, 2022
Int. Cl. H01S 5/125 (2006.01); H01S 5/026 (2006.01); H01S 5/12 (2021.01)
CPC H01S 5/125 (2013.01) [H01S 5/026 (2013.01); H01S 5/0265 (2013.01); H01S 5/1218 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region, the wavelength-tunable DBR laser comprising:
at a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer; and
at a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer.