CPC H01S 5/0021 (2013.01) [H01S 3/027 (2013.01); H01S 5/02224 (2013.01); H01S 5/4087 (2013.01); H01S 3/0071 (2013.01); H01S 3/2383 (2013.01); H01S 5/0225 (2021.01); H01S 5/4031 (2013.01)] | 9 Claims |
1. A high power, high brightness solid-state laser assembly, for providing a high-quality blue laser beam over long periods of time without substantial degradation of the laser beam properties, the assembly comprising:
a. a housing, the housing defining an internal cavity; wherein the internal cavity is isolated from an environment that is external to the housing;
b. a solid-state device for propagating a laser beam from a propagation surface of the solid-state device along a laser beam path, wherein the laser beam has a wavelength in the range of 410 nm to 500 nm; and wherein the laser beam has a power density of at least about 0.5 MW/cm2 at the propagation surface of the solid-state device;
c. an optics assembly, the optics assembly in optical communication with the solid-state device and on the laser beam path;
d. wherein the solid-state device and the optics assembly are located within the housing and in the internal cavity, whereby the solid-state device and the optics assembly are isolated from the external environment;
e. the housing comprising a housing propagation surface, whereby the laser beam is transmitted from the housing into the external environment along the laser beam path; the housing propagation surface in optical communication with the optics assembly and on the laser beam path;
f. the laser beam upon exiting the housing propagation surface characterized by beam properties, the beam properties comprising: (i) a power of at least 100 W; and, (ii) a BPP of less than 100 mm-mrad;
g. the internal cavity being free from sources of silicon based contaminates, whereby during operation of the solid-state device SiO2 production within the internal cavity is avoided; whereby the internal cavity avoids SiO2 buildup; and,
h. whereby the degradation rate of the beam properties is 2.3% per khrs or less.
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