US 11,862,756 B2
Solid state transducer dies having reflective features over contacts and associated systems and methods
Martin F. Schubert, Mountain View, CA (US); and Vladimir Odnoblyudov, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 4, 2019, as Appl. No. 16/673,092.
Application 15/269,302 is a division of application No. 13/482,176, filed on May 29, 2012, granted, now 9,450,152, issued on Sep. 20, 2016.
Application 16/673,092 is a continuation of application No. 15/910,994, filed on Mar. 2, 2018, granted, now 10,553,760.
Application 15/910,994 is a continuation of application No. 15/269,302, filed on Sep. 19, 2016, granted, now 9,911,903, issued on Mar. 6, 2018.
Prior Publication US 2020/0066939 A1, Feb. 27, 2020
Int. Cl. H01L 33/40 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/405 (2013.01) [H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/502 (2013.01); H01L 33/58 (2013.01); H01L 33/382 (2013.01); H01L 2933/0016 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A light emitting diode (LED), comprising:
a transduction structure including a back side, a front side opposite the back side, a first semiconductor material having a surface at the back side, a second semiconductor material having a surface at the front side, and a light-emitting active material between the first and second semiconductor materials; and
an electrical connector having—
a base material electrically coupled to the second semiconductor material and including a top side facing the front side of the transduction structure,
a buried contact having the base material extending through the first semiconductor material and the active material from the back side of the transduction structure to a depth in the second semiconductor material such that the base material separates a first portion of the active material from a second portion of the active material, and
a reflective material disposed between the second semiconductor material and at least a portion of the base material nearest the front side of the transduction structure, wherein the reflective material covers at least the top side of the base material.