US 11,862,755 B2
Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate
Chen-Fu Chu, Hsinchu (TW); Shih-Kai Chan, Miaoli County (TW); Yi-Feng Shih, Miaoli County (TW); David Trung Doan, Hsinchu County (TW); Trung Tri Doan, Hsinchu County (TW); Yoshinori Ogawa, Kanagawa (JP); Kohei Otake, Gunma (JP); Kazunori Kondo, Gunma (JP); Keiji Ohori, Saitama (JP); Taichi Kitagawa, Gunma (JP); Nobuaki Matsumoto, Gunma (JP); Toshiyuki Ozai, Gunma (JP); and Shuhei Ueda, Niigata (JP)
Assigned to Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed by SemiLEDs Corporation, Chu-Nan (TW); and SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Jul. 20, 2022, as Appl. No. 17/868,949.
Application 17/868,949 is a continuation of application No. 16/987,478, filed on Aug. 7, 2020, granted, now 11,417,799.
Prior Publication US 2022/0359785 A1, Nov. 10, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/20 (2013.01) [H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/44 (2013.01); H01L 2933/0025 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for fabricating a flip chip light emitting diode (FCLED) die comprising:
providing a substrate;
providing a plurality of die sized semiconductor structures, each semiconductor structure comprising an epitaxial stack comprising a P-layer, an N-layer, and an active layer between the P-layer and the N-layer configured to emit light, the epitaxial stack having a surface; and one or more metal electrodes on the surface of the epitaxial stack, each metal electrode making electrical contact to the P-layer or the N-layer;
providing a receiving plate comprising an elastomeric polymer layer;
applying an adhesive force to the metal electrodes by placing the metal electrodes in contact with the elastomeric polymer layer with the semiconductor structures still physically connected to the substrate;
performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface of the semiconductor structures with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer; and
removing the semiconductor structures from the receiving plate.