US 11,862,754 B2
Method for fabricating (LED) dice using semiconductor structures on a substrate and laser lift-off to a receiving plate
Chen-Fu Chu, Hsinchu (TW); Shih-Kai Chan, Miaoli County (TW); Yi-Feng Shih, Miaoli County (TW); David Trung Doan, Hsinchu County (TW); Trung Tri Doan, Hsinchu County (TW); Yoshinori Ogawa, Kanagawa (JP); Kohei Otake, Gunma (JP); Kazunori Kondo, Gunma (JP); Keiji Ohori, Saitama (JP); Taichi Kitagawa, Gunma (JP); Nobuaki Matsumoto, Gunma (JP); Toshiyuki Ozai, Gunma (JP); and Shuhei Ueda, Nigata (JP)
Assigned to SemiLEDs Corporation, Chu-Nan (TW); and Shin-Etsu Chemical Co., Ltd., Tokyo (JP)
Filed by SemiLEDs Corporation, Chu-Nan (TW); and SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on May 10, 2022, as Appl. No. 17/740,729.
Application 17/740,729 is a continuation of application No. 16/987,478, filed on Aug. 7, 2020, granted, now 11,417,799.
Claims priority of provisional application 62/892,644, filed on Aug. 28, 2019.
Prior Publication US 2022/0271198 A1, Aug. 25, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/20 (2010.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/20 (2013.01) [H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/44 (2013.01); H01L 2933/0025 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method for fabricating light emitting diode (LED) dice comprising:
providing a plurality of die sized semiconductor structures on a substrate, the semiconductor structures comprised of electrodes and epitaxial stacks of compound semiconductor materials;
providing a receiving plate having a spin coated curable silicone elastomeric polymer layer thereon;
applying an adhesive force to the electrodes by placing the electrodes in contact with the elastomeric polymer layer with the semiconductor structures still physically connected to the substrate;
performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer, with the elastomeric polymer layer functioning as a shock absorber and an adhesive surface for holding the semiconductor structures; and
selecting a laser wavelength and power such that during the laser lift-off (LLO) process the laser beam can transmit through the substrate and be absorbed by the semiconductor layer at the interface with the substrate.