US 11,862,750 B2
Optoelectronic device
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Mar. 2, 2022, as Appl. No. 17/653,188.
Application 17/653,188 is a continuation of application No. 16/675,601, filed on Nov. 6, 2019, granted, now 11,322,643.
Application 16/675,601 is a continuation in part of application No. 14/976,814, filed on Dec. 21, 2015, granted, now 10,475,956, issued on Nov. 12, 2019.
Application 14/976,814 is a continuation of application No. PCT/IB2015/052480, filed on Apr. 6, 2015.
Claims priority of application No. 2014902007 (AU), filed on May 27, 2014.
Prior Publication US 2022/0190194 A1, Jun. 16, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/0012 (2013.01) [H01L 33/06 (2013.01); H01L 33/325 (2013.01); H01L 33/508 (2013.01); H01L 33/60 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first conductivity type region comprising a first superlattice; and
an i-type active region adjacent to the first conductivity type region, the i-type active region comprising an i-type superlattice;
wherein:
the first conductivity type region is a p-type region or an n-type region;
the first superlattice is comprised of a plurality of first unit cells;
the i-type superlattice is comprised of a plurality of i-type unit cells;
each of the plurality of first unit cells comprises a first set of at least two distinct substantially single crystal layers;
each of the plurality of i-type unit cells comprises a second set of at least two distinct substantially single crystal layers;
an average alloy content of the plurality of the first unit cells and the i-type unit cells is constant along a growth direction; and
a combined thickness of the second set of at least two distinct substantially single crystal layers is thicker than a combined thickness of the first set of at least two distinct substantially single crystal layers.