CPC H01L 29/78642 (2013.01) [H01L 29/66742 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/488 (2023.02)] | 20 Claims |
1. A thin film transistor structure, comprising:
a gate electrode;
a gate insulator, wherein a first sidewall of the gate insulator is adjacent to a sidewall of the gate electrode;
a channel material, wherein a sidewall of the channel material is adjacent to a second sidewall of the gate insulator;
a source contact adjacent to, and coupled with, a first sidewall portion of the channel material; and
a drain contact adjacent to, and coupled with, a second sidewall portion of the channel material.
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