CPC H01L 29/7786 (2013.01) [H01L 29/1075 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/41725 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01); H01L 29/1066 (2013.01); H01L 29/41766 (2013.01)] | 29 Claims |
1. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate electrically coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a p-region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the p-region is buried below said group III-Nitride barrier layer and the p-region is configured without a p-type material contact and without a connection.
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