US 11,862,714 B2
Semiconductor device and manufacturing method thereof
Jiun Shiung Wu, Pingtung County (TW); and Guan-Jie Shen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 9, 2021, as Appl. No. 17/397,646.
Application 17/397,646 is a continuation of application No. 16/681,506, filed on Nov. 12, 2019, granted, now 11,121,238.
Claims priority of provisional application 62/773,086, filed on Nov. 29, 2018.
Prior Publication US 2021/0376115 A1, Dec. 2, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/6681 (2013.01) [H01L 29/0657 (2013.01); H01L 29/16 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an isolation insulating layer disposed over a substrate;
a fin structure having a bottom part and an upper part disposed over the substrate, the upper part protruding the isolation insulating layer;
a gate structure disposed over the upper part of the fin structure;
a source/drain structure, wherein:
the upper part includes a bottom portion and an upper portion disposed on the bottom portion,
the bottom part has a tapered shape and the bottom portion of the upper part has a reverse tapered shape,
a portion having a minimum width of the fin structures, which is located below a portion having a largest width, is covered by a gate dielectric layer,
the gate dielectric layer is in contact with the isolation insulating layer, and
an entirety of the upper part of the fin structure including the bottom portion and the upper portion is made of a same semiconductor material, and is made of a different semiconductor material than the bottom part of the fin structure.