US 11,862,704 B2
Electronic device and method of manufacturing the same
Jinseong Heo, Suwon-si (KR); Yunseong Lee, Osan-si (KR); Sanghyun Jo, Seoul (KR); Keunwook Shin, Yongin-si (KR); and Hyeonjin Shin, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 29, 2022, as Appl. No. 18/059,660.
Application 18/059,660 is a division of application No. 17/154,354, filed on Jan. 21, 2021, granted, now 11,538,918.
Application 17/154,354 is a continuation of application No. 16/259,038, filed on Jan. 28, 2019, granted, now 10,937,885, issued on Mar. 2, 2021.
Claims priority of application No. 10-2018-0111596 (KR), filed on Sep. 18, 2018.
Prior Publication US 2023/0104991 A1, Apr. 6, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/513 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02115 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02356 (2013.01); H01L 29/516 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of manufacturing an electronic device, the method comprising:
preparing a substrate including a channel element;
depositing a carbon layer on the channel element, the carbon layer having an sp2 bonding structure;
depositing a ferroelectric layer on the carbon layer;
depositing a gate electrode on the ferroelectric layer; and
crystallizing the ferroelectric layer through an annealing process.