US 11,862,698 B2
Semiconductor device and method of manufacturing semiconductor device
Saya Shimomura, Komatsu Ishikawa (JP); Hiroaki Katou, Nonoichi Ishikawa (JP); and Toshifumi Nishiguchi, Hakusan Ishikawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Sep. 13, 2021, as Appl. No. 17/473,622.
Claims priority of application No. 2021-037198 (JP), filed on Mar. 9, 2021.
Prior Publication US 2022/0293755 A1, Sep. 15, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/4236 (2013.01) [H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a second electrode;
a first semiconductor region of a first conductive type provided between the first electrode and the second electrode and electrically connected to the first electrode;
a plurality of second semiconductor regions of a second conductive type provided between the first semiconductor region and the second electrode;
a third semiconductor region of the first conductive type provided between the second semiconductor region and the second electrode and electrically connected to the second electrode;
a conductive portion provided between the first electrode and the second electrode, the conductive portion including a first conductive portion and a second conductive portion, the first conductive portion provided on a side of the conductive portion facing the first electrode in a first direction from the first electrode to the first semiconductor region, the second conductive portion provided on a side of the conductive portion facing the second electrode in the first direction, the second conductive portion disposed between the second semiconductor regions in a second direction crossing the first direction, and the second conductive portion having an impurity concentration lower than an impurity concentration of the first conductive portion;
a first insulating portion provided between the first conductive portion and the first semiconductor region;
a gate electrode provided between the second semiconductor region and the second conductive portion in the second direction;
a second insulating portion provided between the second conductive portion and the gate electrode; and
a third insulating portion provided between the second semiconductor region and the gate electrode.