CPC H01L 29/2003 (2013.01) [H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/304 (2013.01); H01L 29/0657 (2013.01)] | 9 Claims |
1. A Group-III element nitride semiconductor substrate, comprising:
a first surface; and
a second surface,
wherein the first surface is a minor surface,
wherein the second surface has a second-surface central region and a second-surface outer peripheral region,
wherein the second-surface central region is a minor surface,
wherein the second-surface outer peripheral region is a non-mirror surface, and
wherein the first surface has a surface roughness Ra of 1 nm or less,
wherein the second-surface outer peripheral region has a width of 1 mm or less.
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