US 11,862,688 B2
Integrated GaN power module
Ashish K. Sahoo, Santa Clara, CA (US); Brandon Pierquet, San Francisco, CA (US); Derryk C. Davis, Campbell, CA (US); Javier Ruiz, San Jose, CA (US); and John M. Brock, San Carlos, CA (US)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Jul. 28, 2021, as Appl. No. 17/387,093.
Prior Publication US 2023/0030746 A1, Feb. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/14 (2006.01); H01L 29/20 (2006.01); H01L 23/31 (2006.01); H01L 23/36 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 23/14 (2013.01); H01L 23/31 (2013.01); H01L 23/36 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 27/088 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated power module comprising:
a printed circuit board characterized by a first surface and a second surface, and including a thermal via extending from the second surface towards the first surface;
one or more surface-mounted components coupled with the first surface of the printed circuit board;
a heat-transfer substrate;
one or more gallium nitride transistors coupled between and soldered to each of the second surface of the printed circuit board and the heat-transfer substrate; and
a spacer coupled between and soldered to each of the printed circuit board and the heat-transfer substrate, wherein the spacer is directly coupled to the thermal via.