US 11,862,669 B2
Inversion channel devices on multiple crystal orientations
Siddarth Sundaresan, Dulles, VA (US); Ranbir Singh, Dulles, VA (US); and Jaehoon Park, Dulles, VA (US)
Assigned to GeneSiC Semiconductor Inc., Dulles, VA (US)
Filed by GeneSiC Semiconductor Inc., Dulles, VA (US)
Filed on Jul. 14, 2022, as Appl. No. 17/864,761.
Application 17/864,761 is a division of application No. 17/007,014, filed on Aug. 31, 2020, granted, now 11,444,152.
Prior Publication US 2022/0352302 A1, Nov. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/04 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/045 (2013.01) [H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/781 (2013.01); H01L 29/7813 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A device comprising a unit cell, the unit cell comprising:
a drift region and a source region of a first conductivity type;
a first well region and a second well region of a second conductivity type; and
a trench region that extends through the first well region,
wherein the source region is confined within the second well region,
wherein the second well region overlaps a portion of the first well region to form a composite well region, and
wherein the composite well region is interspersed between the trench region and the drift region.