US 11,862,649 B2
Imaging device, operation method thereof, and electronic device
Seiichi Yoneda, Isehara (JP); Hidetomo Kobayashi, Kanagawa (JP); Takashi Nakagawa, Kangawa (JP); Yusuke Negoro, Kanagawa (JP); and Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Mar. 6, 2023, as Appl. No. 18/117,784.
Application 18/117,784 is a division of application No. 17/057,526, granted, now 11,600,645, previously published as PCT/IB2019/054838, filed on Jun. 11, 2019.
Claims priority of application No. 2018-117769 (JP), filed on Jun. 21, 2018.
Prior Publication US 2023/0207585 A1, Jun. 29, 2023
Int. Cl. H04N 25/79 (2023.01); H04N 25/532 (2023.01); H04N 25/78 (2023.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01); H04N 25/531 (2023.01); H04N 25/771 (2023.01)
CPC H01L 27/14612 (2013.01) [H04N 25/531 (2023.01); H04N 25/532 (2023.01); H04N 25/75 (2023.01); H04N 25/771 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01)] 6 Claims
OG exemplary drawing
 
1. An operation method of an imaging device comprising;
obtaining first imaging data which is data corresponding to an illuminance of light emitted to a photoelectric conversion element and retaining the first imaging data in a first circuit in a first period,
obtaining second imaging data which is data corresponding to an illuminance of light emitted to the photoelectric conversion element and retaining the second imaging data in a second circuit in a second period, and
reading out the first imaging data retained in the first circuit and the second imaging data retained in the second circuit in a third period,
wherein a first layer comprising the photoelectric conversion element, a second layer comprising the first circuit, and a third layer comprising the second circuit are stacked in the imaging device.