US 11,862,643 B2
Transistor and display device
Shunpei Yamazaki, Setagaya (JP); Toshinari Sasaki, Atsugi (JP); Junichiro Sakata, Atsugi (JP); and Masashi Tsubuku, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Aug. 9, 2021, as Appl. No. 17/396,832.
Application 17/396,832 is a continuation of application No. 16/879,853, filed on May 21, 2020, granted, now 11,094,717.
Application 16/879,853 is a continuation of application No. 16/569,070, filed on Sep. 12, 2019, granted, now 10,665,615, issued on May 26, 2020.
Application 16/569,070 is a continuation of application No. 15/957,318, filed on Apr. 19, 2018, granted, now 10,418,384, issued on Sep. 17, 2019.
Application 15/957,318 is a continuation of application No. 15/498,940, filed on Apr. 27, 2017, granted, now 9,954,007, issued on Apr. 24, 2018.
Application 15/498,940 is a continuation of application No. 15/171,292, filed on Jun. 2, 2016, granted, now 9,640,670, issued on May 2, 2017.
Application 15/171,292 is a continuation of application No. 14/819,801, filed on Aug. 6, 2015, granted, now 9,368,641, issued on Jun. 14, 2017.
Application 14/819,801 is a continuation of application No. 14/217,887, filed on Mar. 18, 2014, granted, now 9,105,735, issued on Aug. 11, 2015.
Application 14/217,887 is a continuation of application No. 13/770,120, filed on Feb. 19, 2013, granted, now 8,710,499, issued on Apr. 29, 2014.
Application 13/770,120 is a continuation of application No. 12/869,278, filed on Aug. 26, 2010, granted, now 8,389,989, issued on Mar. 5, 2013.
Claims priority of application No. 2009-204801 (JP), filed on Sep. 4, 2009.
Prior Publication US 2021/0366944 A1, Nov. 25, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H10K 59/123 (2023.01); H10K 59/121 (2023.01)
CPC H01L 27/1225 (2013.01) [H01L 27/1248 (2013.01); H01L 27/1255 (2013.01); H01L 29/24 (2013.01); H01L 29/42356 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78618 (2013.01); H01L 29/78693 (2013.01); H01L 27/1214 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H10K 59/123 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display device comprising a pixel portion, the pixel portion comprising:
a transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer comprising a channel formation region;
a second insulating layer over and in contact with the oxide semiconductor layer, the second insulating layer overlapping with the channel formation region;
a source electrode over and in contact with a first region of the oxide semiconductor layer; and
a drain electrode over and in contact with a second region of the oxide semiconductor layer;
a capacitor;
a light-emitting element electrically connected to the transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a color filter under the first electrode; and
a third insulating layer in contact with a side surface and a top surface of the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second insulating layer is different from the third insulating layer,
wherein each of the second insulating layer and the third insulating layer comprises silicon oxide,
wherein resistance of the channel formation region is higher than resistance of the first region,
wherein the resistance of the channel formation region is higher than resistance of the second region,
wherein the second insulating layer comprises a region overlapping with the capacitor, and
wherein the first electrode comprises a region overlapping with the channel formation region and the capacitor.